TFG1200 - 200V High-Side/Low-Side eGaN Gate Driver

Product Type: eGaN Gate Driver
Current Status:

Product Overview
The TFG1200 is a High-side/low-side gate driver uniquely designed to drive enhancement mode Gallium Nitride (eGaN) FETs. The TFG1200 provides the special requirements of an eGaN FET driver: supply clamping, low pull-up and pull-down impedance, and high peak currents all within a single IC. A higher sink capability maintains the gate driver line at a low level during the fast dv/dt of the eGaN FET without unintended turn on of the FET.

Fast propagation delays, fast rise times, and a proprietary bootstrap capacitor auto-recharge allow higher switching frequencies allowing amaller component footprints; and with the integrated bootstrap diode the required area compared to a discrete solution is greatly reduced.

Features

• Floating High-side driver in bootstrao operation to 200V
• 1.2A/5A peak source/sink current
• 0.4Ω/2Ω pull down/pull up impedance
• Internal bootstrap supply voltage clamped to 5.2V
• Independent high-side and low-side logic inputs
• Proprietary bootstrap capcitor auto-recharge technology
• Fast propagation delays (25ns typical)
• Seperate source and sink outputs