TELEFUNKEN Semiconductors reached a significant milestone with SiGe power HBT

Heilbronn, Germany - January 12, 2010

TELEFUNKEN Semiconductors announced today that they have achieved a run rate of >100 million units per year supply to their customers of high performance SiGe power ICs utilizing HBT technology. This is a significant milestone in Foundry business and validates excellent features of TELEFUNKEN’s low cost SiGe power HBT technology in comparison to high cost III-V-based (GaAs, InP, GaN) HEMT technology and market acceptance and market share gains of their technology.

TELEFUNKEN Semiconductors’ SiGe HBT process is in manufacturing in Heilbronn, Germany, since 1998. With SiGe PDKs, TS customers are able to design high performance integrated circuits with analog frequencies up to 80 GHz and sufficient power capability. Telefunken Semiconductors offers world class HICUM models for HBTs with Monte-Carlo-Simulations based on production statistics. The cost efficient high speed SiGe power technology is eminently well-suited for applications in the area of telecommunications and high-speed data transfer such as DECTTM, CDMA, 5.8-GHz WLAN and power amplifier (WCDMA, 802.11, Bluetooth range extension, etc.

A volume of 100 million units per year demonstrates the manufacturing capabilities of Telefunken Semiconductors and acceptance of SiGe as the industry standard for wireless amplification.

TELEFUNKEN Semiconductors 2009 - All rights reserved. , TELEFUNKEN Semiconductors logo and combinations thereof, all registered trademarks or trademarks of TELEFUNKEN Semiconductors or its subsidiaries. Other terms and product names may be trademarks of others.

TELEFUNKEN Semiconductors Contacts:
Andre Rocke, Marketing & Communications
Phone: +49 1761 07131 60